User Contributed Dictionary
Noun
dislocations- Plural of dislocation
Extensive Definition
In materials
science, a dislocation is a crystallographic
defect, or irregularity, within a crystal
structure. The presence of dislocations strongly influences
many of the properties of materials. The theory was originally
developed by Vito
Volterra in 1905. Some types of dislocations can be visualised
as being caused by the termination of a plane of atoms in the middle of a crystal. In such a case, the
surrounding planes
are not straight, but instead bend around the edge of the
terminating plane so that the crystal structure is perfectly
ordered on either side. The analogy with a stack of paper is apt:
if a half a piece of paper is inserted in a stack of paper, the
defect in the stack is only noticeable at the edge of the half
sheet.
There are two primary types: edge dislocations
and screw dislocations. Mixed dislocations are intermediate between
these.
Mathematically, dislocations are a type of
topological
defect, sometimes called a soliton. The mathematical theory
explains why dislocations behave as stable particles: they can be
moved about, but maintain their identity as they move. Two
dislocations of opposite orientation, when brought together, can
cancel each other (this is the process of annihilation), but a single
dislocation typically cannot "disappear" on its own.
Dislocation geometry
There are two main types of dislocation, edge and
screw. Dislocations found in real materials typically are mixed,
meaning that they have characteristics of both.
A crystalline material consists of a regular
array of atoms, arranged into lattice planes (imagine stacking
oranges in a grocers, each of the trays of oranges are the lattice
planes). One approach is to begin by considering a 3-d
representation of a perfect crystal lattice, with the atoms
represented by spheres. The viewer may then start to simplify the
representation by visualising planes of atoms instead of the atoms
themselves (Figure A).
Edge dislocations
An edge dislocation is a defect where an extra
half-plane of atoms is introduced mid way through the crystal,
distorting nearby planes of atoms. When enough force is applied
from one side of the crystal structure, this extra plane passes
through planes of atoms breaking and joining bonds with them until
it reaches the grain boundry. A simple schematic diagram of such
atomic planes can be used to illustrate lattice defects such as
dislocations. (Figure B represents the "extra half-plane" concept
of an edge type dislocation). The dislocation has two properties, a
line direction, which is the direction running along the bottom of
the extra half plane, and the Burgers
vector which describes the magnitude and direction of
distortion to the lattice. In an edge dislocation, the Burgers
vector is perpendicular to the line direction.
The stresses caused by an edge dislocation are
complex due to its inherent asymmetry. These stresses are described
by three equations:
\sigma_ = \frac \frac
\sigma_ = \frac \frac
\tau_ = \frac \frac
where μ is the shear
modulus of the material, b is the Burgers
vector, ν is Poisson's
ratio and x and y are coordinates. These equations suggest a
vertically oriented dumbbell of stresses surrounding the
dislocation, with compression experienced by the atoms near the
"extra" plane, and tension experienced by those atoms near the
"missing" plane.
Dislocations, slip and plasticity
Until the 1930s, one of the enduring challenges of materials science was to explain plasticity in microscopic terms. A naive attempt to calculate the shear stress at which neighbouring atomic planes slip over each other in a perfect crystal suggests that, for a material with shear modulus G, shear strength τm is given approximately by:\tau_m = \frac \,
As shear modulus in metals is typically within the
range 20 000 to 150 000 MPa, this is difficult
to reconcile with shear stresses in the range 0.5 to 10 MPa
observed to produce plastic deformation in experiments.
In 1934, Egon Orowan,
Michael
Polanyi and G.
I. Taylor, roughly simultaneously, realized that plastic
deformation could be explained in terms of the theory of
dislocations. Dislocations can move if the atoms from one of the
surrounding planes break their bonds and rebond with the atoms at
the terminating edge. In effect, a half plane of atoms is moved in
response to shear stress by breaking and reforming a line of bonds,
one (or a few) at a time. The energy required to break a single
bond is far less than that required to break all the bonds on an
entire plane of atoms at once. Even this simple model of the force
required to move a dislocation shows that plasticity is possible at
much lower stresses than in a perfect crystal. In many materials,
particularly ductile materials, dislocations are the "carrier" of
plastic deformation, and the energy required to move them is less
than the energy required to fracture the material. Dislocations
give rise to the characteristic malleability of metals.
When metals are subjected to "cold
working" (deformation at temperatures which are relatively low
as compared to the material's absolute melting temperature, Tm,
i.e., typically less than 0.3 Tm) the dislocation density
increases due to the formation of new dislocations and dislocation
multiplication. The consequent increasing overlap between the
strain fields of adjacent dislocations gradually increases the
resistance to further dislocation motion. This causes a hardening
of the metal as deformation progresses. This effect is known as
strain
hardening (also “work hardening”). Tangles of dislocations are
found at the early stage of deformation and appear as non
well-defined boundaries; the process of dynamic recovery
leads eventually to the formation of a cellular structure
containing boundaries with misorientation lower than 15° (low angle
grain boundaries). In addition, adding pinning points that inhibit
the motion of dislocations, such as alloying elements, can
introduce stress fields that ultimately strengthen the material by
requiring a higher applied stress to overcome the pinning stress
and continue dislocation motion.
The effects of strain hardening by accumulation
of dislocations and the grain structure formed at high strain can
be removed by appropriate heat treatment (annealing)
which promotes the recovery
and subsequent recrystallisation
of the material.
The combined processing techniques of work
hardening and annealing allow for control
over dislocation density, the degree of dislocation entanglement,
and ultimately the yield
strength of the material.
Dislocation Climb
Dislocations can slip in planes containing both the dislocation and the Burgers Vector. For a screw dislocation, the dislocation and the Burgers vector are parallel, so the dislocation may slip in any plane containing the dislocation. For an edge dislocation, the dislocation and the Burgers vector are perpendicular, so there is only one plane in which the dislocation can slip. There is an alternative mechanism of dislocation motion, fundamentally different from slip, that allows an edge dislocation to move out of its slip plane, known as dislocation climb. Dislocation climb allows an edge dislocation to move perpendicular to its slip plane.The driving force for dislocation climb is the
movement of vacancies through a crystal lattice. If a vacancy moves
next to the boundary of the extra half plane of atoms that forms an
edge dislocation, the atom in the half plane closest to the vacancy
can "jump" and fill the vacancy. This atom shift "moves" the
vacancy in line with the half plane of atoms, causing a shift, or
positive climb, of the dislocation. The process of a vacancy being
absorbed at the boundary of a half plane of atoms, rather than
created, is known as negative climb. Since dislocation climb
results from individual atoms "jumping" into vacancies, climb
occurs in single atom diameter increments.
During positive climb, the crystal shrinks in the
direction perpendicular to the extra half plane of atoms because
atoms are being removed from the half plane. Since negative climb
involves an addition of atoms to the half plane, the crystal grows
in the direction perpendicular to the half plane. Therefore,
compressive stress in the direction perpendicular to the half plane
promotes positive climb, while tensile stress promotes negative
climb. This is one main difference between slip and climb, since
slip is caused by only shear stress.
One additional difference between dislocation
slip and climb is the temperature dependence. Climb occurs much
more rapidly at high temperatures than low temperatures due to an
increase in vacancy motion. Slip, on the other hand, has only a
small dependence on temperature.
Notes
Bibliography
- [1]Reed-Hill, R. E. (1994) "Physical Metallurgy Principles" ISBN 0-534-92173-6
- Dieter, G. E. (1986) Mechanical Metallurgy ISBN 0-07-100406-8
- Honeycombe, R.W.K. (1984) The Plastic Deformation of Metals ISBN 0-7131-2181-5
- Hull, D. & Bacon, D. J. (1984) Introduction to Dislocations ISBN 0-08-028720-4
- Read, W. T. Jr. (1953) Dislocations in Crystals ISBN 1-114-49066-0
- Kleinert, Hagen, Gauge Fields in Condensed Matter, Vol. II, "STRESSES AND DEFECTS; Differential Geometry, Crystal Melting", pp. 743-1456, World Scientific (Singapore, 1989); Paperback ISBN 9971-5-0210-0 (readable online here)
- Meyers and Chawla. (1999) Mechanical Behaviors of Materials. Prentice Hall, Inc. 228-231.
- "Atomistically-informed Dislocation Dynamics in fcc Crystals", E. Martinez, J. Marian, A. Arsenlis, M. Victoria, J. M. Perlado, Journal of the Mechanics and Physics of Solids, Volume 56, Issue 3, March 2008, Pages 869-895
External links
- Defects in Crystals/ Prof. Dr. Helmut Föll website Chapter 5 contains a wealth of information on dislocations;
- DoITPoMS Online tutorial on dislocations, including movies of dislocations in bubble rafts;
- Scanning Tunneling Microscope - Gallery Image gallery, including a dislocations page, seen at the atomic level of metal surfaces, by the surface physics group at the Faculty of Physics, Vienna University of Technology, Austria.
dislocations in German: Versetzung
(Materialwissenschaft)
dislocations in Spanish: Dislocación
dislocations in Persian: نابجایی
dislocations in French: Dislocation
dislocations in Italian: Dislocazione
dislocations in Dutch: Dislocatie
dislocations in Japanese: 転位
dislocations in Russian: Дислокация
(кристаллохимия)
dislocations in Slovenian: Dislokacija
dislocations in Finnish: Dislokaatio
dislocations in Ukrainian: Дислокація
dislocations in Chinese: 位错